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CONTRIBUTIONS (Posters - 208)
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Posters (208) - Alphabetical order

Author & Title Abstract
Takatoshi Akamatsu (University of Tokyo, Japan)
Anomalous photovoltaic effect in a van der Waals heterostructure
Masashi Akita (Kwansei Gakuin University, Japan)
Theoretical Study on Circularly Polarized Light Absorption in Triptycene Molecular Membrane
Heon Su An (POSTECH, South Korea)
Vapor phase growth of van der Waals epitaxial VSe2/WSe2 heterostructures
Chisato Ando (Tokyo Metropolitan University, Japan)
Simple Preparation of Superconducting NbSe2 Films by Selenization
Nobuyuki Aoki (Chiba University, Japan)
Heavy Doping Effect in MoTe2 Crystal by High Density Laser Irradiation and TFET Device Application
Changhua Bao (Tsinghua Univ., China)
Visualizing phase separation through electronic structure microscopy
Jun-Hwe Cha (Korea Advanced Institute of Science and Technology, South Korea)
Simultaneous B-doping and Reduction of Graphene Oxide by Optical Annealing toward Sensitive Chemiresistors
Yih-Ren Chang (Institute of Atomic and Molecular Sciences, Academia Sinica , Taiwan)
Contact Engineering of High Performance Tri-layer Indium Selenide Field Effect Transistors: Metal Deposition Induced Surface Oxide Reduction
Yung-Huang Chang ( National Yunlin University of Science and Technology, Taiwan)
Doping characteristics for WSxSey Monolayer
Chang-Hsiao Chen (National Sun Yat-sen University , Taiwan)
Chemical Vapor Deposition Growth of InSe Heterostructures
KaiWen Chen ( National Chiao Tung University , Taiwan)
Voltage induced phase engineering in MoS2/GFNO heterostructure
Chih-Yi Cheng (Academia Sinica , Taiwan)
Strong Electron-ion Coulomb Coupling in Layered Indium Selenide Field-Effect Transistors with Ionic Liquids
Yeryun Cheon (Sogang University , South Korea)
Raman studies on structural phase transition in few-layer 1T′ MoTe2
Ta-Wei Chiu (National Institute for Materials Science, Japan)
Study on Field Emission Property of Single Crystal Hafnium Carbide Nanowire
Jongbeom Choi (Tokyo Institute of Technology, Japan)
Fabrication of Graphene - Copper composite films by Cold Spray Technique
Suk-Ho Choi (Kyung Hee University, South Korea)
Two-Dimensional Perovskite Heterostructures for Multifunctional Photonic Device Applications
Yun Choi (Sogang University, South Korea)
Crystallographic axis of ReX2 (X= S, Se) identified by polarized Raman spectroscopy
Rebekah Chua (National University of Singapore , Singapore)
Controllable 1D line defects in monolayer VSe2 on Epitaxial MoS2
Cheng-Chu Chung (National Taiwan University, Taiwan)
Atomically Layer-Dependent Two-Dimensional Platinum Diselenide/Si heterojunction for Efficient Photoelectrochemical Hydrogen Production
Akansha Dager (Yokohama City University, Japan)
Ultrafast Synthesis of Nitrogen Doped Graphene Quantum Dots by Fenugreek Seed
JUAN ANTONIO DELGADO NOTARIO (RIEC, TOHOKU UNIVERSITY, Japan)
Asymmetric Dual Grating Gate Graphene-FETs for direct detection of THz radiation
Krishna Dhakal (Sungkyunkwan University Korea, South Korea)
Orientation of excitons in layered Rhenium disulfides
Ambesh Dixit (Indian Institute of Technology Jodhpur, India)
Onset of out of plane ferroelectric polarization in ultra-thin Janus WSSe monolayer
Lee Dongryul (Korea University, South Korea)
Ultra-wide bandgap junction field effect transistor based on Ga2O3-SiC p-n heterojunctions
Sidi Fan (Sungkyunkwan University , South Korea)
Enhanced Negative Differential Resistance in WSe2/SnSe2 Heterostructure with Tailored Interface
Zhongqiu Fu (Beijing Normal University, China)
Relativistic artificial molecule realized by double graphene quantum dots
Yasumaru Fujii (University of Tsukuba, Japan)
Energetics and electronic structures of three-dimensional covalent networks of hydrocarbon molecules
Runsheng Gao (National Institute for Materials Science, Japan)
Preparation of Layered Si Materials as Anode for Lithium-Ion Batteries
YANLIN GAO (UNIVERSITY OF TSUKUBA, Japan)
Field emission properties of graphene nanostructures under the lateral electric field
Jun Ge (Peking University, China)
Unconventional Hall Effect induced by Berry Curvature
Freskida Goni (Graz University of Technology, Austria)
Organo functionalization of boron nitride nanosheets and their characterization
Manami Goto (Hokkaido University, Japan)
Synthesis of MoS2 nanowires by chemical vapor deposition with turbulent flow and their characterization
Zihan Guo (Beijing Normal University, China)
Effects of AB-BA domain wall on the structures and electronic properties of twisted trilayer graphene
Gayathri H N (Indian Institute of Science, India)
Enhanced Thermal Conductivity In 2D Boron Nitride Infused Plastic
Halimah Harfah (Osaka University, Japan)
A Theoretical Estimate of the Energy Barrier between Bi-stable state in Ni/hBN/Ni
Kazuto Hatakeyama (National Institute of Advanced Industrial Science and Technology, Japan)
Slide ring material/graphene oxide composite with high mechanical and electrical properties
Yuya HATTORI (Institute of Industrial Science, The University of Tokyo, Japan)
Electrical properties of Pb(Bi,Sb)2Te4 topological insulators
Kenjiro HAYASHI (Fujitsu Laboratories Ltd., Japan)
Rotationally-oriented MoS2 grown by Mo-film sulfurization and its application to NO2 detection
Xing He (Department of Electronic Engineering, Graduate School of Engineering, Tohoku University , Japan)
Scalable fabrication of TMD-based highly-transparent solar cells
Masaru HITOMI (Osaka university, Japan)
Bulk-Edge Correspondence of Monolayer Black Phosphorene
Sheng-Chin Ho (National Cheng Kung University, Taiwan)
Zero-magnetic-field anomalous Hall effect in strained graphene systems
Luong Hoa (Sungkyunkwan University, South Korea)
Revealing antiferromagnetic transition of van der Waals MnPS3 via vertical electrical resistance measurement
Matthew Holwill (University of Manchester, UK)
Excess resistivity in graphene superlattices caused by umklapp electron-electron scattering
Jinhua Hong (National Institute of AIST, Japan)
Exciton Band Structures of TMDs measured by Momentum resolved EELS
Seokmo Hong (Ulsan national institute of science and technology (UNIST), South Korea)
Controlled Growth of Amorphous Boron Nitride and Hexagonal Boron Nitride Using PECVD
Hikaru Horii (Tokyo University of Science, Japan)
Thermoelectric Properties of Polycrystalline Bilayer Graphene under Vertical Electric Field
Zakir Hossain (Gunma University, Japan)
Covalent binding of metal nanoparticles on graphene through thiol functionalization
yu-chiang hsieh (National Cheng Kung University, Taiwan)
Unconventional negative magnetoresistance in corrugated graphene
Jialiang Huang (xi'an jiaotong university, China)
A simple effective path to produce bulk quantity pure neat graphene with average layers of 3.8±1.9 without contamination
Inho Hwang (Seoul National University, South Korea)
Hard ferromagnetic van-der-Waals metal (Fe,Co)3GeTe2: a new platform for the study of low-dimensional magnetic quantum criticality
Changbae Hyun (Pohang University of Science and Technology, South Korea)
Atomic-scale resolution of Scanning Probe Microscopy in air and liquid environment
Junichi Inamoto (University of Hyogo, Japan)
Scanning Tunneling Microscopic Analysis of Graphene-Like Graphite Synthesized from Highly Oriented Pyrolytic Graphite
Yasushi Ishiguro (Hosei University, Japan)
Layer-number dependence of NCCDW-ICCDW phase transition in 1T-TaS2
SAURAV ISLAM (INDIAN INSTITUTE OF SCIENCE, India)
Ultra-high near infra-red photoresponsivity in graphene-topological insulator hybrids
Yuki Itahashi (The University of Tokyo, Japan)
Quantum and classical vortex ratchets in a trigonal 2D superconductor MoS2
Takuya Iwasaki (National Institute for Materials Science, Japan)
Valley Hall Effects in Graphene/hBN Superlattices
Lee Jae hyun (Ajou university, South Korea)
Environmental-friendly Dry transfer method for large scale CVD- graphene using MoO3 layer
Hasan Abbas Jaffery (Sejong University, South Korea)
GeSe/IGZO van der waals Diode
Yu Jin Jang (Sungkyunkwan University, South Korea)
Synergy in Two-dimensional MoTe2/Pentacene Heterostructures: Charge Population and Extraction
Aditya Jayaraman (Indian Institute of Science, India)
One Dimensional Localization In Strongly Gapped Bilayer Graphene
Yu-gyeong Je (Ewha womans university, South Korea)
Selective patterning of graphene surface by oxidation and chemical modification using conductive AFM manipulation
Min-Hye Jeong (DGIST, South Korea)
Thickness-controlled Black Phosphorus with Enhanced FET stability Under Ambient Condition
Yeonsu Jeong (Yonsei university, South Korea)
Integration of n-MoTe2 Field Effect Transistor and MAPbI3 perovskite photovoltaic cell toward Energy Harvesting and Self-powered Photo-sensing
xu jie (Nanjing University, China)
Enhancing the Strength of Graphene by a Denser Grain Boundary
Yuya Kado (National Institute of Advanced Industrial Science and Technology, Japan)
Graphene-based materials produced by ball milling of graphite for electric double layer capacitors
Michael Kammermeier (Victoria University of Wellington, New Zealand)
In-plane magnetoelectric response in bilayer graphene
Akinobu Kanda (University of Tsukuba, Japan)
Effect of Microfabrication on Electronic Transport Properties of Exfoliated NbSe2 Thin Films
Naoyuki Kanda (Nagoya University, Japan)
Growth and Characterization of One-Dimensional Transition Metal Monochalcogenides Inside Carbon Nanotubes
Hee Seong Kang (Korea University, South Korea)
Wafer-Scale and Homogeneous Growth of High Quality Tungsten Dichalcogenides Using MOCVD
Luhao Kang (National Institute for Materials Science, Japan)
High Energy Density Lithium Ion Capacitor Assembled with Graphene Cathode
Minpyo Kang (Yonsei Univ., South Korea)
Graphene based Wearable Temperature sensor array with Heater for Healthcare Monitoring
Afsal Kareekunnan (Japan Advanced Institute of Science and Technology, Japan)
Valley Hall Effect in Ungated Bilayer Graphene
Yusuke Kawai (Kwansei Gakuin University, Japan)
Designing Graphene-Based Electrodes that Show Selective Adsorption of Metal Cations Aiming at Metal Resource Recovery from Industrial Effluents
Hayami Kawamoto (The University of Tokyo, Japan)
Growth and Characterization of High Quality Monolayer SnS
EunHee Kee (Konkuk University, South Korea)
Electrical and magnetic properties of graphene/graphene oxide heterostructure device
Chanul Kim (Korea Institute for Advanced Study, South Korea)
First-principles study on the intrinsic origin of the large anomalous Hall effect in perovskite La1-xSrxCoO3
Hangyel Kim (Seoul National University, South Korea)
Strain and charge doping modulation of graphene by epitaxial growth of MoO3
Hanul Kim (Chonbuk National University, South Korea)
Polarized Raman study of CVD-grown MoS2 layered structures
Hyun-Jung Kim (Korea Institute for Advanced Study, South Korea)
Six-nearest-neighbor parameterized Slater-Koster tight-binding model for Bi
Jae Hyun Kim (DGIST, South Korea)
The New Approach of N-Doped Graphene Quantum Dot Synthesis and its Dispersion in PDMS as a Downconverter
Jungcheol Kim (Sogang University, South Korea)
Wavelength-dependent polarized second harmonic generation in MoS2/WSe2 heterostructure
Kangwon Kim (Sogang University, South Korea)
Raman signatures of the antiferromagnetic ordering in 2-dimensional magnetic material MnPS3
Min Jung Kim (Yonsei University, South Korea)
Highly flexible graphene-polydimethylsiloxane pressure-strain sensors with proximity-sensing capability
Yoonseok Kim (Korea University, South Korea)
Two-dimensional WSe2/WOx Quantum Well realized by Monolithic Phase Engineering
Kei Kinoshita (University of Tokyo, Japan)
Detection of cyclotron resonance in graphene using Photo-Seebeck and photo-Nernst effects
Yusei Kioka (Tokyo University of Science, Japan)
Theoretical Study on Electrical Conductivity of Water Adsorbed Graphene
Shunya Kitada (Gunma University, Japan)
Safe and fast synthesis of black phosphorus and its purification
Eunjung Ko (Korea Institute of Advanced Study, South Korea)
Spin-filter tunneling in a magnetic tunnel junction from first-principles
Kana Kojima (Tokyo Metropolitan University, Japan)
Restoring intrinsic optical properties of CVD-grown MoS2 monolayers and their heterostructures
Takahiro Komiyama (Research Institute of Electrical Communication, Tohoku University, Japan)
Observation of the amplification effect of incoming THz/Mid-IR Light by Near-IR Laser-Pumped Multilayer Graphene
Sung Hwan Koo (KAIST, South Korea)
Cobalt Phosphosulfide Decorated Reduced Graphene Oxide Aerogel for Water Electrolysis
Tatsuru Kubota (University of Tokyo, Japan)
Photoluminescent property of exfoliated CrCl3 flake
Chinh Le (University of Ulsan, South Korea)
Spin-orbit splitting engineered broadband resonant second harmonic generation of artificially stacked heterostructures
Chang-Soo Lee (Pohang University of Science and Technology (POSTECH), South Korea)
Atomically Thin Three-Dimensional Membranes of van der Waals Semiconductors by Wafer-Scale Growth
Gil Yong Lee (KAIST, South Korea)
Efficient water oxidation at cobalt based polyoxometalates on N-doped carbon nanotubes
Sang-Hoon Lee (Korea Institute for Advanced Study, South Korea)
Interlayer magnetic coupling in bilayer CrI3: A first-principles study
Sungwon Lee (Sungkyunkwan University, South Korea)
Biosensing application using nanopores formed by dielectric breakdown of h-BN
Taegeon Lee (Chonbuk National University, South Korea)
Raman scattering and photoluminescence studies of Bi2Te3/MoS2 heterostructures
Penglei Li (University of Bath, UK)
Simple and Low Cost Fabrication of Hydrogen Silsesquioxane Encapsulated Graphene Devices
Tianran Li (Peking University, China)
Chemical patterning and device integration of 2D Bi2O2Se
Hong En Lim (Tokyo Metropolitan University, Japan)
Monolayer MoS2 Growth at Metal-Insulator Interface
Soo Yeon Lim (Sogang University, South Korea)
Photoluminescence excitation study on interlayer interaction in WSe2/MoSe2 heterostructure
Miao-Ling Lin (Institute of Semiconductors, China)
Raman spectroscopy of twisted bilayer MoS2
Shiqi Lin (NIMS, Japan)
Graphene/Polymer Composites for Supercapacitor
Yen-Fu Lin (Department of Physics, Taiwan)
High-Performance InSe Transistors and its Low-Power Applications
Anh Khoa Augustin Lu (National Institute of Advanced Industrial Science and Technology, Japan)
On bilayer GaN: New stable structures and impact of hydrogen passivation
THI HOAI THUONG LUU (Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS)/Department of Energy Science, Sungkyunkwan University, South Korea)
Enhanced capacity and high retention of binder-free anodic SnS nanodots@ in-situ S-doped CNT film for sodium ion storage
Kyung Yeol Ma (Ulsan National Institute of Science and Technology (UNIST), South Korea)
Epitaxial Growth of Hexagonal Boron Nitride/Nickel Boride Crystal on Ni(111) as Electrocatalyst for Hydrogen Evolution Reaction
Tianxing Ma (Department of Physics, Beijing Normal University, China)
Magnetic and superconducting correlation in monolayer and twisted bilayer graphene
Tomoki Machida (Institute of Industrial Science, University of Tokyo, Japan)
Superconductivity in exfoliated transition-metal dinitrides ReN2
Mina Maruyama (University of Tsukuba, Japan)
Carrier distribution in TMDC thin film transistors under an external electric field
Hideki Matsuoka (The University of Tokyo, Japan)
Angle dependent Pauli-paramagnetic limit in ultra-thin NbSe2
Yasumitsu Miyata (Tokyo Metropolitan University, Japan)
Continuous Heteroepitaxy of Two-Dimensional Heterostructures Based on Layered Chalcogenides
Hiroyuki Mogi (University of Tsukuba, Japan)
Photoresponse of WSe2/MoSe2 in-plane heterostructure probed by a laser-combined multiprobe spectroscopy
Yusuke Morimoto (Osaka Prefecture University, Japan)
Drum type h-BN nano-electro-mechanical resonator driven by dielectric effect
Yoshifumi Morita (Gunma University, Japan)
Superconductivity in Bilayer Graphene/hBN Superlattices II – More on Experiments and Possible Scenarios –
Rai Moriya (University of Tokyo, Japan)
Dry Release Transfer of Graphene and Few-layer h-BN by utilizing Thermoplasticity of Polypropylene Carbonate for Fabricating van der Waals Heterostructures
Satoshi Moriyama (National Institute for Materials Science, Japan)
Superconductivity in Bilayer Graphene/hBN Superlattices I –Main Results–
Shinichiro Mouri (RItsumeikan University, Japan)
Photoluminescence of Transition Metal Dichalcogenides Depending on the Surface Polarity of GaN Support Substrate
HUSSAIN MUHAMMAD (SEJONG UNIVERSITY, South Korea)
Fabrication of Schottky junction based on P-type GeSe by asymmetry of metal contacts
MUNINDRA MUNINDRA (Delhi Technological University, India)
Non-linearity of the Single Layer Graphene Field Effect Transistors
Yasuji Muramatsu (University of Hyogo, Japan)
Identification of Tars from the Viewpoint of Graphitic Structures by using Soft X-Ray Absorption Spectroscopy
Woongki Na (Sogang University, South Korea)
Optical study of WS2/ReS2 heterostructure
Kaito Nakagawa (Osaka Prefecture University, Japan)
Strain dependent thermal transport in graphene
Shu Nakaharai (National Institute for Materials Science, Japan)
Fabry–Pérot resonances in narrowly separated p-n interfaces in hBN/graphene/hBN with quantum point contact
Yoshihisa Nanri (Oita university, Japan)
Preparation of few-layered graphene using Graphite Intercalation Compounds (GICs)
Cong Nguyen Dinh (Sejong University, South Korea)
Micro-Scale Rectified Ballistic Device Based on hBN Encapsulated Graphene
Yuta Nishina (Okayama University, Japan)
Production of functional carbons through chemical or electrochemical methodologies: mechanistic study and scale-up
Hironaga Noguchi (Tokyo Institute of Technology, Japan)
Self-Assembled Peptides as a Molecular Scaffold on CVD Grown Monolayer MoS2 Transistor
Daichi Obana (Kwansei Gakuin University, Japan)
Topological Edge States of 2D SSH Model: Analytical View
Seiji Obata (Okayama University, Japan)
Selective deposition of monolayer graphene oxide (GO) on hexagonal boron nitride (h-BN) and restoration of GO using catalytic properties of h-BN
Shuichi Ogawa (Tohoku Univeristy, Japan)
PEEM observation of band alignment on graphene/hexagonal boron nitride laminate structure
Noritada Ogura (Graduate School of Engineering, Tohoku University, Japan)
Mechanism of persistent photo conductivity in functionalized graphene nanoribbons
Dong Sik Oh (KAIST, South Korea)
Negative Bias Illumination Stress (NBIS) Stability Analysis of MoS2 Thin-Film Transistor (TFT)
Akihiro OHTAKE (National Institute for Materials Science, Japan)
Heteroepitaxy of MoSe2 on GaSe-terminated Si(111)
Hiroki Oka (Osaka university, Japan)
Band structure of hBN-graphene-hBN trilayer systems
Yuki OKIGAWA (National Institute of Advanced Industrial Science and Technology, Japan)
Relationship between mobility and Raman spectra for plasma CVD graphene on HTHP h-BN
Nana Okimura (Tokyo Institute of Technology, Japan)
Nano carbon contained composite film fabricated by cold spray technique
Momoko Onodera (Institute of Industrial science, The University of Tokyo, Japan)
Electrical tuning of cyclotron resonance magnetic field in a dual-gated trilayer graphene/h-BN vdW heterostructrue
Momoko Onodera (Institute of Industrial Science, The University of Tokyo, Japan)
Transport properties of graphene on h-BN grown with an alloy solvent at atmospheric pressure
Momoko Onodera (Institute of Industrial science, The University of Tokyo, Japan)
Influence of C-rich domain in h-BN on the carrier transport in graphene/h-BN van der Waals heterostructures
Ukyo Ooe (RItsumeikan University, Japan)
Van der Waals Epitaxy of GaN on Graphene by ECR-MBE
Soshun Ozaki (University of Tokyo, Japan)
Berry Curvature Contribution to Magnetization in a Honeycomb Lattice Model
Suman Kalyan Pal (Indian Institute of Technology Mandi, India)
Optical Properties of Two-dimensional Tin(II) monosulfide
Hyunik Park (Korea University, South Korea)
Phase-engineered programmable MoS2/WSe2 p-n diode via lithium-ion intercalation
Jaehyun Park (POSTECH, South Korea)
STM manipulation of intrinsic defects of 2H-MoTe2
Min Yeong Park (POSTECH, South Korea)
Atomic healing of chalcogen vacancies in monolayer WSe2
Sabin Park (The University of Tokyo, Japan)
Cyclotron Resonance and Landau Level Spectroscopy in Graphene/MoS2 heterostructure
Tathagata Paul (Indian Institute of Science, India)
A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing
Yaning Ren (Beijing Normal University, China)
STM characterizations of a circular graphene resonator realized with p-p junctions
Huije Ryu (Seoul National University, South Korea)
Electrical stabilization and room-temperature light emission of trions in van der Waals heterostructure
Victor Ryzhii (Tohoku University, Japan)
Concepts of Terahertz and Infrared Devices based on Graphene/Black Phosphorus-Arsenic
Yahachi Saito (Toyota Physical and Chemical Research Institute, Japan)
Edge States of Graphene Revealed by Field Emission Microscopy
Kohei Sakanashi (Chiba University, Japan)
Electrostatically Confined Quantum Structures in Bilayer Graphene
Yoshiki Sakuma (NIMS, Japan)
Impact of Glass Substrates on MoS2 Monolayers Grown by Novel Oxychloride CVD
Taro Sasaki (The University of Tokyo, Japan)
High Temperature Retention Study of MoS2/h-BN/MoS2 Hetero-Stack Based Non-Volatile Memory
Yuta Seo (University of Tokyo, Japan)
Subband-resolved resonant tunneling in trilayer graphene/h-BN/graphene heterostructures
Jyoti Shakya ( Indian Institute of Science , India)
A Novel Opto-mechanical method for Mass Production of Hexagonal Boron Nitride in Water
Gi Woong Shim (Korea Advanced Institute of Science and Technology (KAIST), South Korea)
Oxygen-Assisted Nucleation Control for High-Quality Metalorganic Chemical Vapor Deposition of Transition Metal Dichalcogenides
Sunao Shimizu (Central Research Institute of Electric Power Industry, Japan)
Electric field control of thermoelectric properties in layered two dimensional materials
Gwang Hyuk Shin (KAIST, South Korea)
Vertical tunneling field effect transistor based on Si-MoS2 van der Waals heterojunction
Minjeong Shin (Konkuk university, South Korea)
Property of MoS2 Junction FET with CrPS4 gate insulator
Mika Sodeno (Iwate University, Japan)
Preparation and Cinnamaldehyde Hydrogenation Performance of Platinum Nanosheets Between Graphite Layer
Pablo Solís-Fernández (Kyushu University, Japan)
Growth of Bilayer Graphene with AB-Stacking Ratios Exceeding 99% by CVD on Cu-Ni Thin Films
Suhan Son (Seoul National University, South Korea)
van der Waals hard ferromagnet VI3
Massimo Spina (NUS, Singapore)
Ionic mobility engineering in graphitic nanochannels
Katsuaki Sugawara (Tohoku University, Japan)
Electronic structure of atomic-layer VSe2 studied by ARPES
Lixian Sun (Guilin University of Electronic Technology, China)
Design and fabrication of graphene composites for energy storage and sensors
Kento Suwa (Tohoku University, Japan)
Realization of the high-performance graphene transistor by controlling the interface between graphene and gate dielectric
Akiihisa Takai (Research Institute for Interdisciplinary Science, Okayama University , Japan)
Carrier scattering in graphene caused by electron-transfer molecules
Kazuyuki Takai (Hosei University, Japan)
Correlation between Chemical structure and reactivity for GO regarding oxidative amine coupling reaction
miuko Tanaka (Univ. ofTokyo, Japan)
Spin-valley Hall transport induced by spontaneous symmetry breaking in half-filled zero Landau level of bilayer graphene
Shin-ichiro Tanaka (Osaka university, Japan)
Phase-shift during the electron scattering probed by the angle-resolved photoelectron spectroscopy: Resonant formation of photoelectron replicas of the Dirac cone on graphene/SiC
Yuki Tanaka (Univ. of Tokyo / Dept. of Applied Physics, Japan)
Superconducting properties of highly-strained 3R-TaSe2 epitaxial thin films
SAYAKA TEZUKA (Tokyo Institute of Technology, Japan)
Spatial Sensing of Bacteria by Photoluminescence of Single-Layer MoS2
Hikari Tomori (Department of Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Japan)
Electrical detection of vortices in mesoscopic superconductor using SIN junction made out of exfoliated layered materials
Minh Dao Tran (Center for Integrated Nanostructure Physics, South Korea)
Charge-transfer-induced hot carriers in MoS2/graphene heterostructure
teng tu (Peking University, China)
Thermal stability of 2D Bi2O2Se
Keiji Ueno (Saitama University, Japan)
Relaxation of Fermi-level Pinning in 2H-MoSe2 FET by Inserting 1T-phase Buffer Layers into Source/Drain Contacts
Naoki Wada (Tokyo Metropolitan University, Japan)
Interface electroluminescence from WS2/WSe2 in-plane heterostructures
Hiroki Waizumi (Tohoku university, Japan)
Observation of chemical phenomena caused by molecular adsorption on MoS2-FET
Yusai Wakafuji (The University of Tokyo , Japan)
Cyclotron Resonance-induced Thermionic Emission in Graphene/MoS2 van del Waals Schottky Junctions
Junyong Wang (National University of Singapore, Singapore)
Electrically tunable charged exciton electroluminescence in monolayer WSe2
Xinyun Wang (National University of Singapore, Singapore)
Defect Heterogeneity in Monolayer WS2 Unveiled by Work Function Variance
Xu Wei (SungKyunKwan University, South Korea)
Toward ultraclean 2D heterostructrue interfaces: h-BN as a novel tool to visualize organic residues
Yusuf Wicaksono (Osaka University, Japan)
First Principles Study on Ni(111)/hBN/Co(0001): Toward Realization of hBN-based Spin-Valve Nanostructure as Cross-Correlation Materials
Cong Xin ( Institute of Semiconductors Chinese Academy of Sciences, China)
Stokes and anti-Stokes Raman scattering in mono- and bilayer graphene
Takatoshi Yamada (National Institute of Advanced Industrial Science and Technology, Japan)
N-type conduction of K-doped stacked graphene layers
Tomoyuki Yamada (Nagoya University, Japan)
Monolayer Transition Metal Dichalcogenide Lateral Heterojunction Light-Emitting Diodes
Mahito Yamamoto (Osaka University, Japan)
Transfer characteristics of transition metal dichalcogenide transistors with VO2 contacts
Yuji Yamamoto (Kwansei Gakuin University, Japan)
Selective Adsorption of Monovalent Cation in Aqueous Solution with Slit-Porous Carbon Electrode
Chueh-Cheng Yang (National Chiao Tung University, Taiwan)
Investigation of Gas Sensing Efficiency and Mechanism Based on P-type MoS2
Seunghoon Yang (Korea University, South Korea)
Enhanced Optoelectronic Performances of the 2D Semiconductor Transition Metal Dichalcogenide Heterojunction via Introducing Monolithically-Band-Engineered Charge Transport Layer
Yohei Yomogida (Tokyo Metropolitan University, Japan)
Synthesis and sorting of inorganic nanotubes
Itsuki Yonemori (Kwansei Gakuin University, Japan)
Vibrational mode analysis of SnS thin films by density functional perturbation theory
Juhee Yoon (Ewha Womans University, South Korea)
The Design of optimized porous graphene membrane using COMSOL Multiphysics
Masaro Yoshida (RIKEN, Japan)
Metastable Phases in 2D Layered Material
Satoshi Yoshida (The University of Tokyo, Japan)
ARPES study on monolayer CrSe2 films fabricated by molecular beam epitaxy
Sanghyuck Yu (Yonsei University, South Korea)
Advanced Non-classical Field Effect Devices Using 2D Transition Metal Dichalcogenide and InGaZnO Channels
Xiaoliang Yu (National Institute for Materials Science , Japan)
Fabrication of Graphene/MoS2 Alternately Stacked Structure for Enhanced Lithium Storage
Guowen Yuan (Nanjing university, China)
Chemical vapor deposition (CVD) growth Mechanism of graphene monocrystalline
Seok Joon Yun (Center for Integrated Nanostructure and Physics, South Korea)
Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant
Kaixuan Zhang (Center for Correlated Electron Systems, Institute for Basic Science, and Department of Physics and Astronomy,, South Korea)
Intriguing properties of several 2D magnetic materials
Kun Zhang ( National Institute for Materials Science, Japan)
Production of Few-Layered Graphene by Enhanced Shear Exfoliation of Graphite in A High Pressure Fluid
Wanli Zhang (NIMS, Japan)
The Graphene/Oxidized MWCNT Supercapacitor Incorporated with Ionic Liquid Electrolyte
Xiao-Mei Zhang (Tokyo Institute of Technology, Japan)
p-Type Multilayer MoS2 Enabled by Plasma Doping for Ultraviolet Photodetectors Application
Xuewen Zhao ( School of Electrical Engineering, Xi’an Jiaotong University, China)
A Facile Way to Prepare Sandwich Structure of Silicon/Parallel Aligned Graphene Anode Materials for Li‐Ion Batteries
Yangzhou Zhao (Hosei University, China)
Effects of defect formation in monolayer MoS2 by low energy Ar+ ion beam irradiation
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